A passive-pixel sensor consists of passive pixels which are read out without amplification, with each pixel consisting of a photodiode and a MOSFET switch. The precursor to the APS was the passive-pixel sensor (PPS), a type of photodiode array (PDA). Since then, the PPD has been used in nearly all CCD sensors and then CMOS sensors. In 1987, the PPD began to be incorporated into most CCD sensors, becoming a fixture in consumer electronic video cameras and then digital still cameras. The new photodetector structure invented at NEC was given the name "pinned photodiode" (PPD) by B.C. The pinned photodiode is a photodetector structure with low lag, low noise, high quantum efficiency and low dark current. Arai in 1982, with the addition of an anti- blooming structure. It was invented by Nobukazu Teranishi, Hiromitsu Shiraki and Yasuo Ishihara at NEC in 1980, and then publicly reported by Teranishi and Ishihara with A. Ī key element of the modern CMOS sensor is the pinned photodiode (PPD). The exact date of origin of these devices is classified, but they were in use by the mid-1980s. The devices are two chips that are put together like a sandwich: one chip contains detector elements made in InGaAs or HgCdTe, and the other chip is typically made of silicon and is used to read out the photodetectors. Another type of image sensor technology that is related to the APS is the hybrid infrared focal plane array (IRFPA), designed to operate at cryogenic temperatures in the infrared spectrum. A low-resolution "mostly digital" N-channel MOSFET (NMOS) imager with intra-pixel amplification, for an optical mouse application, was demonstrated by Richard F. Sadasiv in 1969 proposed a solid-state image sensor with scanning circuits using thin-film transistors (TFTs), with photoconductive film used for the photodetector. An issue with CCD technology was that it required the need for nearly perfect charge transfer, which, according to Eric Fossum, "makes their radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non- silicon materials that extend wavelength response." Īt RCA Laboratories, a research team including Paul K. Smith realized that an electric charge could be stored on a tiny MOS capacitor, which became the basic building block of the charge-couple device (CCD), which they invented in 1969. While researching metal–oxide–semiconductor (MOS) technology, Willard Boyle and George E. Further information: Image sensor § History
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